Secret Diagram

NAND and NOR gates possess a special property: they are universal. That is, given enough gates, either type of gate is able to mimic the operation of any other gate type. For example, it is possible to build a circuit exhibiting the OR function using three interconnected NAND gates. The ability for a single gate type to be able to mimic any other gate type is one enjoyed only by the NAND and the NOR. In fact, digital control systems have been designed around nothing but either NAND or NOR gates, all the necessary logic functions being derived from collections of interconnected NANDs or NORs.
As proof of this property, this section will be divided into subsections showing how all the basic gate types may be formed using only NANDs or only NORs.

Constructing the NOT function

As you can see, there are two ways to use a NAND gate as an inverter, and two ways to use a NOR gate as an inverter. Either method works, although connecting TTL inputs together increases the amount of current loading to the driving gate. For CMOS gates, common input terminals decreases the switching speed of the gate due to increased input capacitance.
Inverters are the fundamental tool for transforming one type of logic function into another, and so there will be many inverters shown in the illustrations to follow. In those diagrams, I will only show one method of inversion, and that will be where the unused NAND gate input is connected to +V (either V_cc or V_dd, depending on whether the circuit is TTL or CMOS) and where the unused input for the NOR gate is connected to ground. Bear in mind that the other inversion method (connecting both NAND or NOR inputs together) works just as well from a logical (1’s and 0’s) point of view, but is undesirable from the practical perspectives of increased current loading for TTL and increased input capacitance for CMOS.

Constructing the “buffer” function

Being that it is quite easy to employ NAND and NOR gates to perform the inverter (NOT) function, it stands to reason that two such stages of gates will result in a buffer function, where the output is the same logical state as the input.

Constructing the AND function

To make the AND function from NAND gates, all that is needed is an inverter (NOT) stage on the output of a NAND gate. This extra inversion “cancels out” the first N in NAND, leaving the AND function. It takes a little more work to wrestle the same functionality out of NOR gates, but it can be done by inverting (“NOT”) all of the inputs to a NOR gate.

Constructing the NAND function

It would be pointless to show you how to “construct” the NAND function using a NAND gate, since there is nothing to do. To make a NOR gate perform the NAND function, we must invert all inputs to the NOR gate as well as the NOR gate’s output. For a two-input gate, this requires three more NOR gates connected as inverters.

Constructing the OR function

Inverting the output of a NOR gate (with another NOR gate connected as an inverter) results in the OR function. The NAND gate, on the other hand, requires inversion of all inputs to mimic the OR function, just as we needed to invert all inputs of a NOR gate to obtain the AND function. Remember that inversion of all inputs to a gate results in changing that gate’s essential function from AND to OR (or vice versa), plus an inverted output. Thus, with all inputs inverted, a NAND behaves as an OR, a NOR behaves as an AND, an AND behaves as a NOR, and an OR behaves as a NAND. In Boolean algebra, this transformation is referred to as DeMorgan’s Theorem, covered in more detail in a later chapter of this book.

Constructing the NOR function

Much the same as the procedure for making a NOR gate behave as a NAND, we must invert all inputs and the output to make a NAND gate function as a NOR.

Up until this point, our analysis of transistor logic circuits has been limited to the TTL design paradigm, whereby bipolar transistors are used, and the general strategy of floating inputs being equivalent to “high” (connected to V_cc) inputs—and correspondingly, the allowance of “open-collector” output stages—is maintained. This, however, is not the only way we can build logic gates.


Field-effect transistors, particularly the insulated-gate variety, may be used in the design of gate circuits. Being voltage-controlled rather than current-controlled devices, IGFETs tend to allow very simple circuit designs. Take for instance, the following inverter circuit built using P- and N-channel IGFETs:


The upper transistor is a P-channel IGFET. When the channel (substrate) is made more positive than the gate (gate negative in reference to the substrate), the channel is enhanced and current is allowed between source and drain. So, in the above illustration, the top transistor is turned on.
The lower transistor, having zero voltage between gate and substrate (source), is in its normal mode: off. Thus, the action of these two transistors are such that the output terminal of the gate circuit has a solid connection to V_dd and a very high resistance connection to ground. This makes the output “high” (1) for the “low” (0) state of the input.
Next, we’ll move the input switch to its other position and see what happens:

Now the lower transistor (N-channel) is saturated because it has sufficient voltage of the correct polarity applied between gate and substrate (channel) to turn it on (positive on gate, negative on the channel). The upper transistor, having zero voltage applied between its gate and substrate, is in its normal mode: off. Thus, the output of this gate circuit is now “low” (0). Clearly, this circuit exhibits the behavior of an inverter, or NOT gate.






Using field-effect transistors instead of bipolar transistors has greatly simplified the design of the inverter gate. Note that the output of this gate never floats as is the case with the simplest TTL circuit: it has a natural “totem-pole” configuration, capable of both sourcing and sinking load current. Key to this gate circuit’s elegant design is the complementary use of both P- and N-channel IGFETs. Since IGFETs are more commonly known as MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistor), and this circuit uses both P- and N-channel transistors together, the general classification given to gate circuits like this one is CMOS: Complementary Metal Oxide Semiconductor.


CMOS circuits aren’t plagued by the inherent nonlinearities of the field-effect transistors, because as digital circuits their transistors always operate in either the saturated or cutoff modes and never in the active mode. Their inputs are, however, sensitive to high voltages generated by electrostatic (static electricity) sources, and may even be activated into “high” (1) or “low” (0) states by spurious voltage sources if left floating. For this reason, it is inadvisable to allow a CMOS logic gate input to float under any circumstances. Please note that this is very different from the behavior of a TTL gate where a floating input was safely interpreted as a “high” (1) logic level.
This may cause a problem if the input to a CMOS logic gate is driven by a single-throw switch, where one state has the input solidly connected to either V_dd or ground and the other state has the input floating (not connected to anything):

Also, this problem arises if a CMOS gate input is being driven by an open-collector TTL gate. Because such a TTL gate’s output floats when it goes “high” (1), the CMOS gate input will be left in an uncertain state:



Fortunately, there is an easy solution to this dilemma, one that is used frequently in CMOS logic circuitry. Whenever a single-throw switch (or any other sort of gate output incapable of both sourcing and sinking current) is being used to drive a CMOS input, a resistor connected to either V_dd or ground may be used to provide a stable logic level for the state in which the driving device’s output is floating. This resistor’s value is not critical: 10 kΩ is usually sufficient. When used to provide a “high” (1) logic level in the event of a floating signal source, this resistor is known as a pullup resistor:

When such a resistor is used to provide a “low” (0) logic level in the event of a floating signal source, it is known as a pulldown resistor. Again, the value for a pulldown resistor is not critical:

Because open-collector TTL outputs always sink, never source, current, pullup resistors are necessary when interfacing such an output to a CMOS gate input:

Although the CMOS gates used in the preceding examples were all inverters (single-input), the same principle of pullup and pulldown resistors applies to multiple-input CMOS gates. Of course, a separate pullup or pulldown resistor will be required for each gate input:

This brings us to the next question: how do we design multiple-input CMOS gates such as AND, NAND, OR, and NOR? Not surprisingly, the answer(s) to this question reveal a simplicity of design much like that of the CMOS inverter over its TTL equivalent.

For example, here is the schematic diagram for a CMOS NAND gate:

Notice how transistors Q₁ and Q₃ resemble the series-connected complementary pair from the inverter circuit. Both are controlled by the same input signal (input A), the upper transistor turning off and the lower transistor turning on when the input is “high” (1), and vice versa. Notice also how transistors Q₂ and Q₄ are similarly controlled by the same input signal (input B), and how they will also exhibit the same on/off behavior for the same input logic levels. The upper transistors of both pairs (Q₁ and Q₂) have their source and drain terminals paralleled, while the lower transistors (Q₃ and Q₄) are series-connected. What this means is that the output will go “high” (1) if either top transistor saturates, and will go “low” (0) only if both lower transistors saturate. The following sequence of illustrations shows the behavior of this NAND gate for all four possibilities of input logic levels (00, 01, 10, and 11):








As with the TTL NAND gate, the CMOS NAND gate circuit may be used as the starting point for the creation of an AND gate. All that needs to be added is another stage of transistors to invert the output signal:




A CMOS NOR gate circuit uses four MOSFETs just like the NAND gate, except that its transistors are differently arranged. Instead of two paralleled sourcing (upper) transistors connected to V_dd and two series-connected sinking (lower) transistors connected to ground, the NOR gate uses two series-connected sourcing transistors and two parallel-connected sinking transistors like this:

As with the NAND gate, transistors Q₁ and Q₃ work as a complementary pair, as do transistors Q₂ and Q₄. Each pair is controlled by a single input signal. If either input A or input B are “high” (1), at least one of the lower transistors (Q₃ or Q₄) will be saturated, thus making the output “low” (0). Only in the event of both inputs being “low” (0) will both lower transistors be in cutoff mode and both upper transistors be saturated, the conditions necessary for the output to go “high” (1). This behavior, of course, defines the NOR logic function.

The OR function may be built up from the basic NOR gate with the addition of an inverter stage on the output:

Since it appears that any gate possible to construct using TTL technology can be duplicated in CMOS, why do these two “families” of logic design still coexist? The answer is that both TTL and CMOS have their own unique advantages.
First and foremost on the list of comparisons between TTL and CMOS is the issue of power consumption. In this measure of performance, CMOS is the unchallenged victor. Because the complementary P- and N-channel MOSFET pairs of a CMOS gate circuit are (ideally) never conducting at the same time, there is little or no current drawn by the circuit from the V_dd power supply except for what current is necessary to source current to a load. TTL, on the other hand, cannot function without some current drawn at all times, due to the biasing requirements of the bipolar transistors from which it is made.
There is a caveat to this advantage, though. While the power dissipation of a TTL gate remains rather constant regardless of its operating state(s), a CMOS gate dissipates more power as the frequency of its input signal(s) rises. If a CMOS gate is operated in a static (unchanging) condition, it dissipates zero power (ideally). However, CMOS gate circuits draw transient current during every output state switch from “low” to “high” and vice versa. So, the more often a CMOS gate switches modes, the more often it will draw current from the V_dd supply, hence greater power dissipation at greater frequencies.

A CMOS gate also draws much less current from a driving gate output than a TTL gate because MOSFETs are voltage-controlled, not current-controlled, devices. This means that one gate can drive many more CMOS inputs than TTL inputs. The measure of how many gate inputs a single gate output can drive is called fanout.
Another advantage that CMOS gate designs enjoy over TTL is a much wider allowable range of power supply voltages. Whereas TTL gates are restricted to power supply (V_cc) voltages between 4.75 and 5.25 volts, CMOS gates are typically able to operate on any voltage between 3 and 15 volts! The reason behind this disparity in power supply voltages is the respective bias requirements of MOSFET versus bipolar junction transistors. MOSFETs are controlled exclusively by gate voltage (with respect to substrate), whereas BJTs are current-controlled devices. TTL gate circuit resistances are precisely calculated for proper bias currents assuming a 5 volt regulated power supply. Any significant variations in that power supply voltage will result in the transistor bias currents being incorrect, which then results in unreliable (unpredictable) operation. The only effect that variations in power supply voltage have on a CMOS gate is the voltage definition of a “high” (1) state. For a CMOS gate operating at 15 volts of power supply voltage (V_dd), an input signal must be close to 15 volts in order to be considered “high” (1). The voltage threshold for a “low” (0) signal remains the same: near 0 volts.
One decided disadvantage of CMOS is slow speed, as compared to TTL. The input capacitances of a CMOS gate are much, much greater than that of a comparable TTL gate—owing to the use of MOSFETs rather than BJTs—and so a CMOS gate will be slower to respond to a signal transition (low-to-high or vice versa) than a TTL gate, all other factors being equal. The RC time constant formed by circuit resistances and the input capacitance of the gate tend to impede the fast rise- and fall-times of a digital logic level, thereby degrading high-frequency performance.

A strategy for minimizing this inherent disadvantage of CMOS gate circuitry is to “buffer” the output signal with additional transistor stages, to increase the overall voltage gain of the device. This provides a faster-transitioning output voltage (high-to-low or low-to-high) for an input voltage slowly changing from one logic state to another. Consider this example, of an “unbuffered” NOR gate versus a “buffered,” or B-series, NOR gate:

In essence, the B-series design enhancement adds two inverters to the output of a simple NOR circuit. This serves no purpose as far as digital logic is concerned, since two cascaded inverters simply cancel:


However, adding these inverter stages to the circuit does serve the purpose of increasing overall voltage gain, making the output more sensitive to changes in input state, working to overcome the inherent slowness caused by CMOS gate input capacitance.